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| Artikel-Nr.: 822EL-2308418 Herst.-Nr.: AS4C16M16SA-6TINTR EAN/GTIN: k.A. |
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| Speicher Größe = 256MBit Organisation = 16 M x 16 Datenumfang = 166MHz Datenbus-Breite = 16bit Adressbusbreite = 13bit Anzahl der Bits pro Wort = 16bit Zugriffszeit max. = 5ns Anzahl der Wörter = 16 M Montage-Typ = SMD Gehäusegröße = TSOP Pinanzahl = 54 Abmessungen = 22.35 x 10.29 x 1.2mm Höhe = 1.2mm Länge = 22.35mm Arbeitsspannnung max. = 3,6 V
The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture 4M word x 16-bit x 4-bank Weitere Informationen: | | Speicher Größe: | 256MBit | Organisation: | 16 M x 16 | Datenumfang: | 166MHz | Datenbus-Breite: | 16bit | Adressbusbreite: | 13bit | Anzahl der Bits pro Wort: | 16bit | Zugriffszeit max.: | 5ns | Anzahl der Wörter: | 16 M | Montage-Typ: | SMD | Gehäusegröße: | TSOP | Pinanzahl: | 54 | Abmessungen: | 22.35 x 10.29 x 1.2mm | Höhe: | 1.2mm | Länge: | 22.35mm | Arbeitsspannnung max.: | 3,6 V |
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| Weitere Suchbegriffe: 2308418, Halbleiter, Speicherbausteine, SDRAM, Alliance Memory, AS4C16M16SA6TINTR, Semiconductors, Memory Chips |
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