Alliance Memory SDRAM 512MBit 32 M x 16 DDR 200MHz 16bit Bits/Wort 5.4ns TSOP 54-Pin, 3 V bis 3,6 V

Speicher Größe = 512MBit
Organisation = 32 M x 16
Datenumfang = 200MHz
Datenbus-Breite = 16bit
Adressbusbreite = 13bit
Anzahl der Bits pro Wort = 16bit
Zugriffszeit max. = 5.4ns
Anzahl der Wörter = 32 M
Montage-Typ = SMD
Gehäusegröße = TSOP
Pinanzahl = 54
Abmessungen = 22.35 x 10.29 x 1.2mm
Höhe = 1.2mm
Länge = 22.35mm
Arbeitsspannnung max. = 3,6 V

The Alliance Memory 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.Auto Refresh and Self Refresh 8192 refresh cycles/64ms CKE power down mode Single +3.3V ±0.3V power supply