Alliance Memory SDRAM 64MBit 4 M x 16 DDR 200MHz 16bit Bits/Wort 5.4ns TSOP 54-Pin, 3 V bis 3,6 V

Speicher Größe = 64MBit
Organisation = 4 M x 16
Datenumfang = 200MHz
Datenbus-Breite = 16bit
Adressbusbreite = 13bit
Anzahl der Bits pro Wort = 16bit
Zugriffszeit max. = 5.4ns
Anzahl der Wörter = 4M
Montage-Typ = SMD
Gehäusegröße = TSOP
Pinanzahl = 54
Abmessungen = 22.35 x 10.29 x 1.2mm
Höhe = 1.2mm
Länge = 22.35mm
Betriebstemperatur max. = +85 °C

The Alliance Memory 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.Fast access time from clock: 4.5/5.4/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture 1M word x 16-bit x 4-bank