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MOSFET, N-Kanal, 30V, 5.5A, SOT-23 (2 Angebote) Bezeichnung=MOSFET, Typ=TSM320N03CX RFG, Abfallzeit=28 ns, Anstiegzeit=32 ns, Ausschaltverzögerung=19 ns, Betriebstemperatur, max.=150 °C, Betriebstemperatur, min.=-55 °C, Drain-Source-Spannung (Vd... |
Taiwan Semiconductor TSM320N03CX RFG |
ab € 0,257*
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| 98% |
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MOSFET, N-Kanal, 60V, 100A, TO-220 (2 Angebote) Bezeichnung=MOSFET, Typ=TSM100N06CZ C0G, Abfallzeit=43 ns, Anstiegzeit=19 ns, Ausschaltverzögerung=85 ns, Betriebstemperatur, max.=150 °C, Betriebstemperatur, min.=-55 °C, Drain-Source-Spannung (Vd... |
Taiwan Semiconductor TSM100N06CZ C0G |
ab € 0,86*
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| 98% |
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MOSFET, N-Kanal, 60V, 11A, SOT-223 (2 Angebote) Bezeichnung=MOSFET, Typ=TSM900N06CW RPG, Abfallzeit=5.3 ns, Anstiegzeit=9.5 ns, Ausschaltverzögerung=18.4 ns, Betriebstemperatur, max.=150 °C, Betriebstemperatur, min.=-55 °C, Drain-Source-Spannung... |
Taiwan Semiconductor TSM900N06CW RPG |
ab € 0,32*
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| 98% |
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MOSFET, P-Kanal, 20V, 4.7A, SOT-26 (2 Angebote) Bezeichnung=MOSFET, Typ=TSM3443CX6 RFG, Abfallzeit=25 ns, Anstiegzeit=35 ns, Ausschaltverzögerung=45 ns, Betriebstemperatur, max.=150 °C, Betriebstemperatur, min.=-55 °C, Drain-Source-Spannung (Vds... |
Taiwan Semiconductor TSM3443CX6 RFG |
ab € 0,34*
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| 98% |
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MOSFET, P-Kanal, 60V, 12A, PDFN (1 Angebot) Bezeichnung=MOSFET, Typ=TSM680P06DPQ56 RLG, Abfallzeit=16.4 ns, Anstiegzeit=42.4 ns, Ausschaltverzögerung=64.6 ns, Betriebstemperatur, max.=150 °C, Betriebstemperatur, min.=-55 °C, Drain-Source-Spa... |
Taiwan Semiconductor TSM680P06DPQ56 RLG |
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10er Pack TSM3401CX (1 Angebot) 10er Pack TSM3401CX TSM3401CX MOSFET 30 V, 3 A, SOT-23-3, P-Channel TSM3401CX MOSFET 30 V, 3 A, SOT-23-3, P-Channel Technische Daten: Hersteller: Taiwan Semiconductor Produktkategorie: MOSFET Monta... |
Taiwan Semiconductor 131102 |
ab € 10,01*
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| 98% |
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Crystal Growth from the Melt (1 Angebot) 1 The content ofthis article is based on a German book version ) which appeared at the end of the year 1986. The author tried to incorporate - as far as possible - new important results published i... |
Springer Verlag 9783642732102 |
€ 99,99*
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Nonlinear Optics in Solids (1 Angebot) In recent years one has witnessed in physics a substantial increase in interest in carrying out fundamental studies in the nonlinear optics of condensed matter. At the Danish universities, this inc... |
Springer Verlag 9783642842085 |
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Modern Crystallography IV (1 Angebot) is devoted to a systematic and up- to-date description of fundamental physical properties of solid and liquid crystals. These include elastic and mechanical, dielectric and ferroelectric, magnetic ... |
Springer Verlag 9783642818400 |
€ 149,99*
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| 98% |
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Secondary Ion Mass Spectrometry SIMS III (1 Angebot) Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981.... |
Springer Verlag 9783642881541 |
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| 98% |
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Cuvillier Verlag 9783736973992 |
€ 67,18*
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Defect Complexes in Semiconductor Structures (1 Angebot) A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the i... |
Springer Verlag 9783540119869 |
€ 99,99*
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| 98% |
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Springer Verlag 9783642825378 |
€ 99,99*
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Light Scattering Spectra of Solids (1 Angebot) The International Conference on Light Scattering Spectra of Solids was held at New York University on September 3, 4, 5, 6, 1968. The Conference received financial support from the U. S. Army Resea... |
Springer Verlag 9783642873591 |
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| 98% |
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New Developments in Semiconductor Physics (1 Angebot) This volume contains selected papers presented at the summer school on semiconductor physics in Szeged (Hungary). They cover the areas of multilayer growth technology, theory of electron states, tr... |
Springer Verlag 9783662136690 |
€ 49,99*
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